Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2011-03-08
2011-03-08
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S049000, C257S064000, C257S094000, C257SE33001, C438S341000, C438S481000, C438S484000, C438S490000, C438S493000
Reexamination Certificate
active
07902557
ABSTRACT:
Disclosed is a semiconductor light emitting device comprising a seed layer, a first conductive semiconductor layer into which the seed layer is partially inserted, a first electrode electrically connected to the first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a second electrode layer under the second conductive semiconductor layer.
REFERENCES:
patent: 2001/0035534 (2001-11-01), Takeya et al.
patent: 2004/0124432 (2004-07-01), Ko
patent: 2007/0228404 (2007-10-01), Tran et al.
patent: 2009/0283782 (2009-11-01), Shakuda
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Louie Wai-Sing
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