Semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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H01L 3300

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active

059397357

ABSTRACT:
A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.

REFERENCES:
patent: 4973136 (1990-11-01), Braatz
patent: 5055893 (1991-10-01), Sasagawa
patent: 5132750 (1992-07-01), Kato et al.
patent: 5384649 (1995-01-01), Takimoto et al.

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