Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Patent
1997-12-18
1999-08-17
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
H01L 3300
Patent
active
059397357
ABSTRACT:
A semiconductor light emitting device includes a substrate and semiconductor overlying layers formed on the substrate. A light emitting layer is formed in the semiconductor layer so as to emit light. The substrate is transmittable of the light emitted by the light emitting layer. A light reflecting layer is formed on a part of a back surface of the substrate. As a result, a semiconductor light emitting device is obtainable by easily dividing a wafer having thereon a light emitting film through recognizing, from a wafer back side, semiconductor layer chip pattern formed overlying the main surface of the wafer.
REFERENCES:
patent: 4973136 (1990-11-01), Braatz
patent: 5055893 (1991-10-01), Sasagawa
patent: 5132750 (1992-07-01), Kato et al.
patent: 5384649 (1995-01-01), Takimoto et al.
Itoh Norikazu
Nakata Shunji
Shakuda Yukio
Sonobe Masayuki
Tsutsui Tsuyoshi
Bui Huy
Hardy David B.
Rohm & Co., Ltd.
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