Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2011-06-07

2011-06-07

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000, C257SE33061, C257SE33068

Reexamination Certificate

active

07956374

ABSTRACT:
The invention discloses a semiconductor light-emitting device. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, at least one electrode structure, and a light reflector. The substrate has an upper surface. The multi-layer structure is formed on the upper surface of the substrate. The multi-layer structure includes a light-emitting region and at least one semiconductor material layer. The multi-layer structure also has a top surface. The at least one electrode structure is formed on the top surface of the multi-layer structure. The light reflector is formed on the top surface of the multi-layer structure.

REFERENCES:
patent: 2005/0139847 (2005-06-01), Kim et al.
patent: 2005/0212098 (2005-09-01), Bogner et al.
patent: 2006/0081858 (2006-04-01), Lin et al.
patent: 2009/0045416 (2009-02-01), Bierhuizen et al.
patent: 2001-307506 (2001-11-01), None
“First Office Action of China Counterpart Application,” issued on Sep. 11, 2009, p1-p8, in which the listed references were cited.
“Office Action of Taiwan Counterpart Application”, issued on Jan. 19, 2011, p1-p5, in which the listed reference was cited.

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