Semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure

Reexamination Certificate

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C257SE33062

Reexamination Certificate

active

07999282

ABSTRACT:
Embodiments relate to a semiconductor light emitting device. The semiconductor light emitting device according to embodiments comprises a light emitting structure comprising a plurality of compound semiconductor layers; a first electrode under the light emitting structure; a second electrode layer on the light emitting structure; a first insulating layer between the light emitting structure and the second electrode layer; and a metal layer formed under the first insulating layer and electrically connected to the first electrode.

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Chuang et al., Solid-State Electronics, vol. 52, pp. 1043-1046 (2008), Apr. 2008.

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