Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-04-12
2011-04-12
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S099000, C257S100000, C257S103000, C257SE23021
Reexamination Certificate
active
07923744
ABSTRACT:
The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
REFERENCES:
patent: 7109529 (2006-09-01), Uemura et al.
patent: 2002/0024053 (2002-02-01), Inoue et al.
patent: 2006/0081857 (2006-04-01), Hong et al.
patent: 2007/0252524 (2007-11-01), Lee et al.
Lin Su-Hui
Lu Yi-Cun
Tsai Tzong-Liang
Wang Wei-Kai
Huga Optotech Inc.
Jianq Chyun IP Office
Tran Tan N
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