Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant material
Patent
1992-01-30
1993-12-21
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant material
257 94, 257 96, H01L 2978, H01L 3300
Patent
active
052723623
ABSTRACT:
An AlGaAs/GaAs system light emitting device includes a GaAs substrate doped with a first conductivity type impurity, a first conductivity type Al.sub.y Ga.sub.1-y As first cladding layer, an Al.sub.x Ga.sub.1-x As (0 <x<y) active layer, and an Al.sub.y Ga.sub.1-y As second cladding layer having a second conductivity type opposite to the first conductivity type successively disposed on the substrate. The light emitting device includes an Al.sub.z Ga.sub.1-z As (z.gtoreq.0) buffer layer which is disposed between the GaAs substrate and the first cladding layer containing a dopant impurity in such a high concentration that the intensity of photoluminescent light generated due to the band-to-band transitions is reduced and has a smaller energy band gap than the energy of the light emitted from the light emitting device. Therefore, a long lifetime semiconductor light emitting device having no sub peak in the light emission spectrum can be easily produced with good yield.
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Horiuchi et al, "A New LED Structure With A Self-Aligned Sphere Lens For Efficient Coupling To Optical Fibers", IEEE Transactions on Electron Devices, vol. ED-24, No. 7, Jul. 1977, pp. 986-990.
Okada Tsuneo
Yagi Tetsuya
Jackson Jerome
Meier Stephen D.
Mitsubishi Denki & Kabushiki Kaisha
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