Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2011-03-29

2011-03-29

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S096000, C257S102000, C257SE33006, C257SE33011, C372S043010, C372S046010

Reexamination Certificate

active

07915625

ABSTRACT:
Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

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