Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2011-08-02
2011-08-02
Chambliss, Alonzo (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S622000, C438S029000, C438S042000
Reexamination Certificate
active
07989826
ABSTRACT:
Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a plurality of third semiconductor structures spaced apart on the second conductive semiconductor layer.
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patent: 7663151 (2010-02-01), Ikeda et al.
patent: 2003/0218179 (2003-11-01), Koide et al.
patent: 2005/0145864 (2005-07-01), Sugiyama et al.
patent: 2007/0221907 (2007-09-01), Jang et al.
Birch & Stewart Kolasch & Birch, LLP
Chambliss Alonzo
LG Innotek Co. Ltd.
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