Semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction

Reexamination Certificate

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Details

C257S622000, C438S029000, C438S042000

Reexamination Certificate

active

07989826

ABSTRACT:
Embodiments provide a semiconductor light emitting device which comprises a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a plurality of third semiconductor structures spaced apart on the second conductive semiconductor layer.

REFERENCES:
patent: 6320209 (2001-11-01), Hata et al.
patent: 7652295 (2010-01-01), Cho et al.
patent: 7663151 (2010-02-01), Ikeda et al.
patent: 2003/0218179 (2003-11-01), Koide et al.
patent: 2005/0145864 (2005-07-01), Sugiyama et al.
patent: 2007/0221907 (2007-09-01), Jang et al.

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