Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2011-06-21

2011-06-21

Harvey, Minsun (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050100, C372S075000

Reexamination Certificate

active

07965750

ABSTRACT:
A semiconductor light emitting device includes a first-conductivity-type first multilayer film reflecting mirror, and a second-conductivity-type second multilayer film reflecting mirror; a cavity layer; and a first conductive section, a second conductive section, and a third conductive section. The cavity layer has a stacked configuration including a first-conductivity-type or undoped first cladding layer, an undoped first active layer, a second-conductivity-type or undoped second cladding layer, a second-conductivity-type first contact layer, a first-conductivity-type second contact layer, a first-conductivity-type or undoped third cladding layer, an undoped second active layer, and a second-conductivity-type or undoped fourth cladding layer. The first conductive section is electrically connected to the first multilayer film reflecting mirror, the second conductive section is electrically connected to the second multilayer film reflecting mirror, and the third conductive section is electrically connected to the first contact layer and the second contact layer.

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Japanese Office Action issued Feb. 16, 2010 for corresponding Japanese Application No. 2008-126665.
Japanese Office Action issued Sep. 29, 2010 for corresponding Japanese Application No. 2008-126665.

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