Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1993-09-29

1995-02-14

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 99, 472 44, 472 45, H01L 29161, H01L 29205, H01L 3300

Patent

active

053898001

ABSTRACT:
According to the present invention, there is provided a semiconductor light-emitting device including a light-emitting layer having a first semiconductor layer, and formed on a main surface of one side of a semiconductor substrate, an upper-most layer of the light-emitting layer made of a compound semiconductor containing elements from the group II and group VI of the periodic table, the second semiconductor layer formed on the first semiconductor layer, and made of a material having a lattice constant different from that of the material of the semiconductor substrate by at least 2%, the second semiconductor layer having a film thickness of a critical film thickness, the first electrode formed on a main surface of the other side of the semiconductor substrate, and the second electrode formed on the second semiconductor layer.

REFERENCES:
patent: 5138404 (1992-08-01), Ishikawa et al.

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