Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2011-08-30
2011-08-30
Thomas, Tom (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S098000, C257SE33065
Reexamination Certificate
active
08008683
ABSTRACT:
The present invention provides a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer which are sequentially stacked, wherein an area where the first electrode layer and the first semiconductor layer are in contact with each other is 3 to 13% of an area of the semiconductor light emitting device.
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International Search Report issued in International Patent Application No. PCT/KR2009/006144 dated May 31, 2010.
Choi Pun Jae
Kim Yu Seung
Lee Jin Bock
McDermott Will & Emery LLP
Rodela Eduardo A
Samsung LED Co., Ltd.
Thomas Tom
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