Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2011-04-19

2011-04-19

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257SE33027

Reexamination Certificate

active

07928453

ABSTRACT:
An end face emission type semiconductor light emitting device which include: a substrate; a first conductive type clad layer stacked on the substrate; an active region layer including an active layer stacked on the first conductive type clad layer; a second conductive type clad layer stacked on the active region layer such that a thickness of a portion thereof at least over an emission region of the active region layer in an emission end face adjacent area is thinner than a thickness of the other portion; and a second conductive type regrowth layer stacked on the second conductive type clad layer, which has a higher refractive index than the second conductive type clad layer.

REFERENCES:
patent: 4943970 (1990-07-01), Bradley
patent: 5329135 (1994-07-01), Terakado
patent: 6541291 (2003-04-01), Kuniyasu
patent: 6859478 (2005-02-01), Kuniyasu
patent: 6914262 (2005-07-01), Hahm et al.
patent: 7528403 (2009-05-01), Borselli et al.
patent: 7759690 (2010-07-01), Miki et al.
patent: 2000-031596 (2000-01-01), None

Affiliated with

Also associated with

Rating

Semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2628239