Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1996-07-25

1998-03-24

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

257 13, 257103, H01S 319, H01L 3300

Patent

active

057320993

ABSTRACT:
A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the <01-1> direction. Side surfaces of the groove has the maximum inclination not larger than 60.degree.. The thickness of the p-type GaAs current block layer is 1.5 .mu.m or more. Stacked on the structured substrate having the current narrowed mechanism via an n-type ZnSe buffer layer are an n-type ZnMgSSe cladding layer, n-type ZnSSe waveguide layer, active layer, p-type ZnSSe waveguide layer, p-type ZnMgSSe cladding layer, and others, to establish an index-guided inner-striped semiconductor laser having SCH structure and CSPW structure.

REFERENCES:
patent: 5363395 (1994-11-01), Gaines et al.
patent: 5371756 (1994-12-01), Fujii
patent: 5404031 (1995-04-01), Sasaki et al.

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