Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1989-11-06

1990-10-30

James, Andrew J.

357 17, 357 30, H01L 312, H01L 3116

Patent

active

049672410

ABSTRACT:
A semiconductor light emitting device has a semiconductor light emitting element section and an n-type semiconductor substrate with a through hole which serves as a window through which light generated by the semiconductor light emitting element section is emitted. The device further includes a p-type region formed in the semiconductor substrate and facing the through hole. The p-type region and the semiconductor substrate constitute a photodiode.

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patent: 4470143 (1984-09-01), Kitamura et al.
patent: 4605943 (1986-08-01), Nakamura et al.
patent: 4614958 (1986-09-01), Mikami et al.
patent: 4653058 (1987-03-01), Akiba et al.
Sze, S. M., Physics of Semiconductor Devices, John Wiley, 1981, pp. 708-710, 759-763, 398-402.
Burrus et al., "Small-Area Double-Heterostructure Aluminum-Gallium Arsenide Electroluminescent Diode Sources for Optical-Fiber Transmission Lines," Optics Communication, vol. 4, No. 4, Dec. 1971.

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