Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1988-04-22

1989-08-29

Sikes, William L.

Coherent light generators

Particular active media

Semiconductor

357 4, 357 17, 357 61, H01S 319, H01L 3300

Patent

active

048624713

ABSTRACT:
A semiconductor, injection mode light emitting device includes a body of a semiconductor material having a quantum mode region formed of alternating layers of gallium nitride and either indium nitride or aluminum nitride. A region of N-type gallium nitride is on one side of the quantum well region and is adapted to inject electrons into the quantum mode region. A region of P-type gallium phosphide is on the other side of the quantum well region and is adapted to inject holes into the quantum mode region. A barrier region of insulating gallium nitride is between the P-type region and the quantum well region and serves to block the flow of electrons from the quantum well region into the P-type region. Conductive contacts are provided on the N-type region and the P-type region.

REFERENCES:
patent: 3683240 (1972-08-01), Pankove
patent: 3740622 (1983-06-01), Pankove et al.
patent: 4268842 (1981-05-01), Jacob et al.
patent: 4396929 (1983-08-01), Ohki et al.
patent: 4408217 (1983-10-01), Kobayashi et al.
patent: 4608581 (1986-08-01), Bagratishvili et al.
patent: 4759024 (1988-07-01), Hayakawa et al.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2246112