Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1998-01-23

2000-09-05

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 43, 372 44, 372 46, H01S 319

Patent

active

061153990

ABSTRACT:
A semiconductor light emitting device of double hetero junction includes an active layer and clad layers. The clad layers include an n-type layer and p-type layer. The clad layers sandwich the active layer. A band gap energy of the clad layers is larger than that of the active layer. The band gap energy of the n-type clad layer is smaller than of the p-type clad layer.

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patent: 5751752 (1998-05-01), Shakuda
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IEEE Journal of Quantum Electronics, vol. QE-17, No. 9, dated Sep. 1981.
(3) Nitride mixed crystal (3 pages)--written agreement against Office Action for Japanese Application 06-219892 on which this application is based.
Isamu Akasaki, Advanced Electronics I-1, III-V, Group of Semiconductor Compound (1994); 1st Edition, Baifu-kan, pp. 345-337.

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