Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1993-03-31

1995-05-23

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

257 49, 257 85, 257 90, 372 44, H01L 2712, H01L 2904, H01S 316

Patent

active

054183952

ABSTRACT:
A semiconductor light emitting diode (LED) has a pn junction, a pin junction or a similar junction formed in a polycrystalline layer with a large grain size. The LED is produced on an amorphous, ceramic, polycrystalline or monocrystalline substrate according to a crystalline growth method and light is emitted by injecting an electric current into the junction.

REFERENCES:
patent: 4069492 (1978-01-01), Pankove
patent: 4863877 (1989-09-01), Fan et al.
patent: 5036373 (1991-07-01), Yamasaki
patent: 5239190 (1993-08-01), Kowasaki
Blakeslee et al, "Growth of Polycrustalline GaAs for Solar Cell Applications", IBM J. Res. Dev., vol. 22, No. 4, Jul. 1978.
Cohen et al, "Schottky barrier behavior in polycrystal GaAs", J. Vac. Sci. Technol., 17(5), Sep./Oct. 1980.

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