Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1998-07-07
2000-07-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 94, 257 96, 257 97, 257 99, 438 26, 438 39, 438 47, H01L 3300
Patent
active
060910844
ABSTRACT:
A semiconductor light emitting device has a light emitting chip and a conductive member. A light emitting chip is formed by an insulating substrate. A semiconductor layered portion has semiconductor layers forming a light emitting layer grown on the insulating substrate. A first electrode (p-side electrode) is formed in electrical connection with a first conductivity type semiconductor layer on a surface side of the semiconductor layered portion. A second electrode (n-side electrode) is formed in electrical connection with a second conductivity type semiconductor layer at a position exposed by partly etching the semiconductor layered portion. The light emitting chip is adhered at a backside of the insulating substrate to the conductive member through a conductive adhesive, and the conductive member is electrically connected to the second electrode.
REFERENCES:
patent: 5479029 (1995-12-01), Uchida et al.
patent: 5557115 (1996-09-01), Shakuda
patent: 5636234 (1997-06-01), Takagi
patent: 5798536 (1998-08-01), Tsutsui
patent: 5990449 (1999-11-01), Kuhlmann et al.
Mintel William
Rohm & Co., Ltd.
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