Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1980-08-29

1982-10-12

Edlow, Martin H.

357 16, 357 17, 357 30, 357 55, H01L 3112, H01L 3300

Patent

active

043541992

ABSTRACT:
A semiconductor light-emitting device comprising a semiconductor substrate of GaAs and a crystal layer of Ga.sub.1-x Al.sub.x As formed by epitaxial growth on the semiconductor substrate. The x value in the crystal layer is gradually decreased in accordance with the development of the epitaxial growth. A light ray emitted from a light-emitting portion in the crystal layer is bent in accordance with the distribution of the x value, so that the light ray can reach a light-emitting surface of the crystal layer. According to the invention, a groove is provided on the surface of the crystal layer so that the light-launching efficiency is increased over that of the prior art.

REFERENCES:
patent: 3790853 (1974-02-01), Pankove
patent: 4117504 (1978-09-01), Maslov et al.
patent: 4191593 (1980-03-01), Cacheux
patent: 4294510 (1981-10-01), Chappell

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