Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1980-09-10

1982-11-23

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, 372 48, H01S 319

Patent

active

043609198

ABSTRACT:
An improved semiconductor light emitting device having a stabilized lateral mode oscillation and device current.
In the present invention, a current rejecting layer and an etch-back preventive layer are added to a semiconductor laser provided with a clad layer composed of a projecting portion for confining light from an active layer and a portion for passing the light. The thicknesses of the layers, the relationships of forbidden band widths of the layers and their conductivity type are all specified. An easily manufactured semiconductor laser with an excellent current limit function and optical guide function are obtained and the lateral mode oscillation oscillation is stable.

REFERENCES:
patent: 4329660 (1982-05-01), Yano et al.
Aiki et al., "Transverse Mode Stabilized Al.sub.x Ga.sub.1-x As Injection Lasers with Channeled-Substrate-Planar Structure", JQE, vol. QE14, No. Feb. 1978, pp. 89-94.

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