Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1990-06-18

1992-01-28

Epps, Georgia

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

050848933

ABSTRACT:
In a ridge waveguide-type semiconductor light-emitting device, a buried layer is composed of a high-resistance semiconductor material (e.g., amorphous silicon), thereby improving the heat-dissipating characteristic and prolonging lifetime. The buried layer is made higher than the top surface of the ridge, the top surface of the ridge is situated in the resulting recess, and an electrode is formed from the top surface of the ridge to the top surface of the surrounding buried layer to cover the entirety of these surfaces. Making the buried layer higher than the top of the ridge prevents an electrical short circuit for being caused by an electrically conductive bonding agent used in junction-down mounting.

REFERENCES:
patent: 4845724 (1989-07-01), Hayakawa et al.

Affiliated with

Also associated with

Rating

Semiconductor light-emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light-emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1865745