Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1990-07-31

1992-04-21

Prenty, Mark

357 15, 357 13, 357 52, 357 20, H01L 3300, H01L 2948, H01L 2990, H01L 2906

Patent

active

051073110

ABSTRACT:
A semiconductor light emitting device comprises a substrate, an n-type semiconductor layer formed on the substrate, a p-type semiconductor layer formed on a portion of a surface of the n-type semiconductor layer, an electrode for applying a reverse biasing voltage to the PN junction to cause an avalanche breakdown and an area formed in a portion of the PN junction. The p-type semiconductor layers forms a planar type PN junction with the n-type semiconductor layer. The area formed in a portion of the PN junction has a lower break down voltage than that of other area.

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Applied Physics Letters, vol. 55, No. 4, Jul. 24, 1989, pp. 374-376, Chen, J. et al. "Photo Emission From Avalance Breakdown In The Collector Junction of GaAs/AlGaAs Heterojunction Bipolar Transistors".
IBM Technical Disclosure Bulletin, vol. 30, No. 6, Nov. 1987, pp. 398-399, "Light-emitter Diode".
Solid-State Electronics, vol. 28, No. 9, Sep. 1985, pp. 847-854, Bryant, F., et al., "Blue Electroluminescence In Reverse-biased ZnS(Zn, Al) Diodes".

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