Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1996-07-12
1998-07-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 96, 257 97, 257101, 257103, 372 45, 372 46, 372 47, H01L 3300
Patent
active
057773491
ABSTRACT:
A semiconductor light emitting device includes: a compound semiconductor substrate of a first conductive type; a multilayer structure formed on the compound semiconductor substrate, the multilayer structure including at least an active layer for emitting light, a lower cladding layer of the first conductive type and an upper cladding layer of a second conductive type with the active layer interposed therebetween; an intermediate layer of the second conductive type formed on the multilayer structure; and a current diffusion layer of the second conductive type formed on the intermediate layer. The intermediate layer alleviates at least one of a lattice mismatching between the upper cladding layer and the current diffusion layer and a difference in energy positions at a lower end of a conduction band and/or an upper end of a valence band in an energy band profile which is exhibited before forming a junction between the upper cladding layer and the current diffusion layer.
REFERENCES:
patent: 5138404 (1992-08-01), Ishikawa et al.
patent: 5539239 (1996-07-01), Kawazu et al.
patent: 5600158 (1997-02-01), Noto et al.
Tiwari et al, "Empirical Fit to Band Discontinuities and Barrier Heights in III-V Alloy Systems", Appl. Phys. Letter, vol. 60, No. 5, pp. 630-632, 1992.
Crawford, "AlInGaP LED Lamp with High Luminance", Publication of Yokogawa Hewlett Packard, 1993, pp. 1-8.
Nakamura Jun-ichi
Nakatsu Hiroshi
Mintel William
Sharp Kabushiki Kaisha
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