Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1991-08-19

1992-10-06

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 357 16, 357 17, H01S 319

Patent

active

051538890

ABSTRACT:
Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the active layer sandwiched therebetween, a first electrode formed in a part of the surface of the double hetero structure portion, and a second electrode formed on the back surface of the substrate. A current diffusion layer formed of GaAlAs is interposed between the double hetero structure portion and the first electrode, said current diffusion layer having a thickness of 5 to 30 microns and a carrier concentration of 5.times.10.sup.17 cm.sup.-3 to 5.times.10.sup.18 cm.sup.-3.

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Y. K. Su et al., The Fabrication of Single Heterojunction AlGaAs/InGaP Electroluminescent, J. Appl. Phys. vol. 62, pp. 2541-2544.
Isao Hino et al., Room-Temperature Pulsed Operation of AlGaInP/GalnP/AlGalnP Double Heterostructure Visible Light Laser Diodes Grown by Metalorganic Chemical Vapor Deposition, Appl. Phys. Ltt., vol. 43, 1983, pp. 987-989.
H. Asahi et al., Molecular Beam Epitaxial Growth of INGaAIP Visible Laser Diodes Operating at 0.66-0.68 .mu.m at Room Temperatures, J. Appl. Phys., vol. 54, 1983, pp. 6958-6964.

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