Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1996-10-01

1998-08-04

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant concentration or concentration profile

372 44, 372 45, 372 50, 257102, 257 97, H01L 3300

Patent

active

057897735

ABSTRACT:
In an AlGaInP type semiconductor light-emitting device, an n-type AlGaInP cladding layer and a p-type AlGaInP cladding layer are deposited so as to interpose an active layer made of GaInP or AlGaInP therebetween. Light guiding layers are provided between the active layer and the n-type cladding layer, and/or, between the active layer and the p-type cladding layer, respectively. The p-type cladding layer is doped with Be serving as a p-type dopant. The active layer, the p-type cladding layer and the light guiding layers are doped with Si which may serve as an n-type dopant.

REFERENCES:
patent: 4916708 (1990-04-01), Hayakawa
patent: 5214663 (1993-05-01), Kakimoto et al.
patent: 5617438 (1997-04-01), Hatano
Ilegems, "Beryllium Doping and Diffusion in Molecular-Beam Epitaxy of GaAs and A1.sub.x Ga.sub.1-x As", Journal of Applied Physics, vol. 48, No. 3, pp. 1278-1287, 1977.
Ilegems, "Beryllium Doping and Diffusion in Molecular-Beam Epitaxy of Gaas and ALXGA1-AS", Journal of Applied Physics, vol. 48, No. 3, Mar. 1977, pp. 1278-1287.

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