Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1998-05-05

2000-09-19

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257103, H01L 2978, H01L 3300

Patent

active

061216364

ABSTRACT:
A semiconductor light emitting device is provided, which does not deteriorate in luminance, maintains a high reliability, permits more free choice of an adhesive, and promises effective extraction of light to the exterior even when it is bonded to a lead frame or other support with the adhesive in practical use. In a GaN light emitting diode, GaN compound semiconductor layers are stacked sequentially on a front surface of a sapphire substrate to form a light emitting diode structure, and a reflective film is formed on a rear surface. Alternatively, the GaN compound semiconductor layers forming the light emitting diode structure are selectively removed by etching to define an inverted mesa-shaped end surface, and the reflective film is formed on the end surface. Both the p-side electrode and the n-side electrode are formed on a common side of the substrate where the GaN compound semiconductor layers are formed.

REFERENCES:
patent: 3813587 (1974-05-01), Umeda
patent: 5798537 (1998-08-01), Nitta
patent: 5868951 (1999-02-01), Schuck, III

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