Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Patent
1998-07-07
2000-05-09
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
257 94, 257458, H01L 2978
Patent
active
060607300
ABSTRACT:
There is provided a semiconductor laminated portion in which gallium nitride based compound semiconductor layers including an n-type layer and a p-type layer are laminated for forming an emitting layer on a substrate. Then, an n-side electrode and a p-side electrode are provided so as to be electrically connected to the n-type layer and p-type layer of the semiconductor laminated portion, respectively. The n-type layer includes at least an n-type first layer and an n.sup.+ -type second layer so that the carrier concentration of the portion to be provided with the n-side electrode is higher than the carrier concentration of the portion in contact with the emitting layer. Consequently, the ohmic contact characteristics of the n-type layer and n-side electrode are improved to reduce a forward voltage, resulting in a semiconductor light emitting device with high light emitting efficiency.
REFERENCES:
patent: 5825052 (1998-10-01), Shakuda
patent: 5838029 (1998-11-01), Shakuda
patent: 5909036 (1999-06-01), Tanaka et al.
patent: 5909040 (1999-06-01), Ohba et al.
patent: 5981980 (1999-11-01), Miyajima et al.
Meier Stephen D.
Rohm & Co., Ltd.
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