Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1991-03-12

1992-06-23

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

357 17, H01S 319

Patent

active

051249952

ABSTRACT:
A semiconductor light-emitting device comprising a substrate formed of GaAs, a cladding layer formed of (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P and an active layer formed of Ga.sub.y In.sub.1-y P (0.5.ltoreq.y.ltoreq.1) or Ga.sub.y In.sub.1-y P (0.ltoreq.y.ltoreq.0.5), said cladding layer having its composition represented by (Al.sub.x Ga.sub.1-x).sub.0.5 In.sub.0.5 P ((0.ltoreq.x.ltoreq.1), lattice-matched to said GaAs substrate, and said cladding layer having a band-gap size made larger by at least 0.25 eV than said active layer. The device can attain an oscillation wavelength of 0.67 .mu.m or less or from 0.68 .mu.m to 0.78 .mu.m.

REFERENCES:
patent: 4893313 (1990-01-01), Hatakoshi
patent: 4974231 (1990-11-01), Gomyo

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