Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

1998-11-13

2000-02-01

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 13, 257 14, 257 94, H01L 3300

Patent

active

060206012

ABSTRACT:
A semiconductor light-emitting device longer in life time and higher in reliability is provided which is formed of, on a substrate (1), a first conductivity type cladding layer (3) and a second conductivity type cladding layer (7) made of Zn.sub.x Mg.sub.Y Be.sub.1-x-y S.sub.Z Se.sub.1-z (0<x<1,0<y<1,0.ltoreq.z<1) system compound semiconductor, at least one active layer (5) made of Zn.sub.A Cd.sub.B Be.sub.1-A-B S.sub.c Se.sub.1-C (0<A.ltoreq.1, 0.ltoreq.B<1, 0.ltoreq.C<1), having a compressive distortion relative to the above substrate and located between the first and second conductivity type cladding layers, and at least one strain compensation layer having a tensile distortion relative to the above substrate and made of Zn.sub.u Cd.sub.1-u S.sub.v Se.sub.1-v (0<u.ltoreq.1, 0.ltoreq.v<1).

REFERENCES:
patent: 5663514 (1997-09-01), Shiraishi et al.

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