Semiconductor light-emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257SE33067

Reexamination Certificate

active

08071992

ABSTRACT:
A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.

REFERENCES:
patent: 4907846 (1990-03-01), Tustison et al.
patent: 6277665 (2001-08-01), Ma et al.
patent: 6784462 (2004-08-01), Schubert
patent: 6797987 (2004-09-01), Chen
patent: 2007/0001178 (2007-01-01), Tran et al.
patent: 2005-513787 (2005-05-01), None
patent: WO 2003/052838 (2003-06-01), None

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