Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2011-02-07

2011-10-18

Doan, Jennifer (Department: 2874)

Liquid crystal cells, elements and systems

Particular structure

Particular illumination

C349S056000, C349S061000, C349S062000

Reexamination Certificate

active

08040463

ABSTRACT:
The device includes a support substrate, a reflective electrode on the support substrate; an AlGaInP-based semiconductor film including a light-emission layer and is provided on the reflective electrode, and a surface electrode provided on the semiconductor film. The surface electrode includes an ohmic electrode constituted by electrode pieces disposed on the semiconductor film in a distributed manner; the reflective electrode is constituted by a line electrode and dot electrodes provided on both sides of each of the electrode pieces, along the electrode pieces; the surface electrode and the reflective electrode are disposed so as to satisfy the following equations:in-line-formulae description="In-line Formulae" end="lead"?b>a, and 0.8(a2+2ab)1/2<c<2.4(a2+2ab)1/2.in-line-formulae description="In-line Formulae" end="tail"?

REFERENCES:
patent: 7923723 (2011-04-01), Hayashi et al.
patent: 2006/0141645 (2006-06-01), Yamazaki et al.
patent: 2008/0277655 (2008-11-01), Yamamoto et al.
patent: 2002-217450 (2002-08-01), None
patent: 2008-282851 (2008-11-01), None

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