Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2008-04-15

2010-06-08

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S085000, C257S095000, C257SE25019

Reexamination Certificate

active

07732802

ABSTRACT:
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device comprises a substrate comprising a reflective pattern with a valley, a first nitride semiconductor layer on the substrate, an air gap formed between the reflective pattern and the first nitride semiconductor layer, an active layer on the first nitride semiconductor layer, and a second nitride semiconductor layer on the active layer.

REFERENCES:
patent: 4638334 (1987-01-01), Burnham et al.
patent: 2007/0036189 (2007-02-01), Hori et al.

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