Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2007-09-26
2010-06-29
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S095000, C257SE33073, C257SE33074
Reexamination Certificate
active
07745843
ABSTRACT:
A light emitting device with an increased light extraction efficiency includes a two-dimensional periodic structure in a surface thereof and has two layers that together form an asymmetric refractive index distribution with respect to the active layer, which is in between the two layers. The light emitting device includes a substrate layer, a first layer, an active layer and a second layer that are stacked sequentially. The first layer includes at least one layer, including a semiconductor cladding layer of a first conductivity type. At least one layer of the first layer has a refractive index that is lower than a refractive index of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer. Each constituent layer of the second layer has a refractive index that is lower than the refractive index of the active layer.
REFERENCES:
patent: 5779924 (1998-07-01), Krames et al.
patent: 2002/0030194 (2002-03-01), Camras et al.
patent: 2004/0028104 (2004-02-01), Buda et al.
patent: 2004/0062283 (2004-04-01), Takeuchi et al.
patent: 2004/0075095 (2004-04-01), Shakuda et al.
patent: 2004/0206972 (2004-10-01), Erchak et al.
patent: 2006/0289886 (2006-12-01), Sakai
patent: 2007/0133648 (2007-06-01), Matsuda et al.
patent: 10-4209 (1998-01-01), None
patent: 2004-031221 (2004-01-01), None
patent: 2004-128445 (2004-04-01), None
patent: 2005-069709 (2005-03-01), None
Baba Toshihiko
Kazama Takuya
Sonoda Junichi
Frishauf Holtz Goodman & Chick P.C.
Ho Tu-Tu V
Stanley Electric Co. Ltd.
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