Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1980-02-11

1982-05-11

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 45, H01S 319

Patent

active

043296602

ABSTRACT:
In a semiconductor light emitting device, a buried layer of a semiconductor is selectively formed in at least one of a first and a second clad layers in order to determine a light emitting region by the configuration of the buried layer of the semiconductor. The buried layer of the semiconductor has a conductivity type which is opposite to the conductivity type of the surrounding clad layer and an index of refraction which is different from the index of refraction of the surrounding clad layer.

REFERENCES:
patent: 4033796 (1977-07-01), Burnham et al.
Yano et al, "Oscillation Characteristics in InGaAsP/InP DH Lasers with Self-Aligned Structure", IEEE JQE, vol. QE-15, No. 12, Dec. 1979, pp. 1388-1395.
Nishi et al, "Self-Aligned Structure InGaAsP/InP DH Lasers", Appl. Phys. Lett. 35(3), Aug. 1, 1979, pp. 232-234.

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