Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2008-08-01

2010-12-28

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

Plural light emitting devices

C257S092000, C257S095000, C257SE21009, C257SE21211, C257SE33005, C257SE33008, C257SE33023, C257SE33055, C257SE33067, C257SE33074

Reexamination Certificate

active

07858995

ABSTRACT:
A semiconductor light emitting device includes a substrate, and a light emitting portion that is disposed on the substrate, and includes an active layer formed of a group III nitride semiconductor using a nonpolar plane or a semipolar plane as a growth principal surface, in which side end surfaces of the active layer are specular surfaces.

REFERENCES:
patent: 7186302 (2007-03-01), Chakraborty et al.
patent: 7504274 (2009-03-01), Chakraborty et al.
patent: 7709824 (2010-05-01), Choi et al.
patent: 2009/0146162 (2009-06-01), Chakraborty et al.
patent: 2009/0194761 (2009-08-01), Masui et al.
patent: 2009/0309110 (2009-12-01), Raring et al.
patent: 2009/0315055 (2009-12-01), Tamboli et al.
patent: 2010/0032695 (2010-02-01), Fellows-Demille et al.
Tetsuya Takeuchi et al.: “Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GalnN/GaN Heterostructures and Quantum Wells” Japanese Journal of Applied Physics; vol. 39, 2000, pp. 413-416.

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