Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-12-13
2010-12-21
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S088000, C257S089000, C257S098000, C257SE33060, C257SE33068, C257S033000
Reexamination Certificate
active
07855389
ABSTRACT:
A semiconductor light-emitting device includes a first LED chip whose emitted light is wavelength-converted by a fluorescent substance layer formed by applying and curing a fluorescent substance material, and a second LED chip whose emitted light is not wavelength-converted by the fluorescent substance layer, wherein the first LED chip and the second LED chip are arranged on a substrate in such a way that a level of an emission layer of the second LED chip is higher than that of a top face of the first LED chip above the substrate.
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Ishikura Takuro
Ito Tomihiro
Nixon & Vanderhye P.C.
Sharp Kabushiki Kaisha
Spalla David
Warren Matthew E
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