Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2008-06-23
2010-10-19
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S013000, C257S086000, C257S103000, C257SE29071
Reexamination Certificate
active
07816701
ABSTRACT:
A semiconductor light emitting device is provided. The semiconductor light emitting device comprises: a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; a first quantum dot layer on the active layer; and a second conductive semiconductor layer on the first quantum dot layer.
REFERENCES:
patent: 2008/0303055 (2008-12-01), Seong
patent: 2009/0256165 (2009-10-01), Smith et al.
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co. Ltd.
Pert Evan
Wilson Scott R
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