Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2005-11-09
2010-06-29
Gurley, Lynne A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257SE33001
Reexamination Certificate
active
07745841
ABSTRACT:
A semiconductor light-emitting device which exhibits small threshold current, high differential efficiency, and good characteristics, by reducing electrons that overflow an electron barrier, trapping the electrons in an active layer. Of the barrier layers of an active layer, a final barrier layer, which is a barrier layer closest to a p side, is smaller in band gap energy than other barrier layers. Thus, as compared with a case where the final barrier layer has the same band gap energy as that of the other barrier layer, an energy band discontinuity (electron barrier) with an electron blocking layer can be made larger. As a result, overflow of electrons is reduced.
REFERENCES:
patent: 5544188 (1996-08-01), Takiguchi et al.
patent: 6563850 (2003-05-01), Matsumoto et al.
patent: 6642546 (2003-11-01), Kuramoto et al.
patent: 2002/0053676 (2002-05-01), Kozaki
patent: 2005/0127391 (2005-06-01), Yanamoto
patent: 7-170022 (1995-07-01), None
patent: 10-294534 (1998-11-01), None
patent: 11-112087 (1999-04-01), None
patent: 11-274644 (1999-10-01), None
patent: 2002-223042 (2002-08-01), None
patent: 2002-335052 (2002-11-01), None
patent: 2003-204122 (2003-07-01), None
patent: 2003-273473 (2003-09-01), None
patent: 2004-087908 (2004-03-01), None
patent: 2001-0090499 (2001-10-01), None
patent: 2001-0114210 (2001-12-01), None
patent: WO 01/47035 (2001-06-01), None
Van De Walle et al.,Small valence-band offsets at GaN/InGaN heterojunctions, pp. 2577-2579 (1997), 1997 American Institute of Physics.
Gurley Lynne A
Leydig , Voit & Mayer, Ltd.
Matthews Colleen A
Mitsubishi Denki & Kabushiki Kaisha
LandOfFree
Semiconductor light-emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light-emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4173433