Semiconductor light emitting device

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S099000, C257SE33068, C257SE33069, C372S050110, C372S099000

Reexamination Certificate

active

07829905

ABSTRACT:
A semiconductor light emitting device for emission of light having a predetermined bandwidth in a primary direction of emission includes a light generating region for the generation of light; and a 1-dimensional photonic crystal structure having a photonic bandgap covering at least a segment of said bandwidth. The 1-dimensional photonic crystal structure is located such that upon incident of light from the light generating region, light having a wavelength within the bandgap of the 1-dimensional photonic crystal structure is reflected in the primary direction of emission.

REFERENCES:
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patent: 6784462 (2004-08-01), Schubert
patent: 6831302 (2004-12-01), Erchak et al.
patent: 6943377 (2005-09-01), Gaska et al.
patent: 6958494 (2005-10-01), Lin et al.
patent: 2005/0035354 (2005-02-01), Lin et al.
patent: 2006/0027815 (2006-02-01), Wierer, Jr. et al.
patent: 2006/0081858 (2006-04-01), Lin et al.
patent: 1368764 (2002-09-01), None
patent: 1645637 (2005-07-01), None
patent: WO 2005/015647 (2005-02-01), None
International Search Report Application No. PCT/CN2007/070238 dated Oct. 11, 2007.

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