Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2008-06-23

2010-12-07

Mandala, Victor A (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S094000, C257S103000, C257SE33028, C257SE33068

Reexamination Certificate

active

07847308

ABSTRACT:
Provided is a semiconductor light emitting device. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type super lattice layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type super lattice layer comprises a second conductive type nitride layer and an undoped nitride layer on the active layer. The second conductive type semiconductor layer is formed on the second conductive type super lattice layer.

REFERENCES:
patent: 2005/0121679 (2005-06-01), Nagahama et al.
patent: 2006/0237733 (2006-10-01), Yamada

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