Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2007-07-06

2010-10-12

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257SE33008

Reexamination Certificate

active

07812338

ABSTRACT:
A semiconductor light emitting device may include an n-type contact layer on a substrate. An active layer may be on the n-type contact layer and/or include two or more quantum well layers and two or more barrier layers. A p-type contact layer may be on the active layer. Energy band gaps of the quantum well layers may be larger as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, thicknesses of the quantum well layers may be smaller as the quantum well layers are closer to the n-type contact layer from the p-type contact layer, and/or energy band gaps of the barrier layers may be larger as the barrier layers are closer to the n-type contact layer from the p-type contact layer.

REFERENCES:
patent: 5684309 (1997-11-01), McIntosh et al.
patent: 6504171 (2003-01-01), Grillot et al.
patent: 7279717 (2007-10-01), Yamada

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