Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2008-03-31

2009-10-13

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

C257S080000, C257S084000, C257S088000, C257S098000, C257SE33001

Reexamination Certificate

active

07601987

ABSTRACT:
The present invention provides a semiconductor light emitting device realizing a lower detection level of spontaneous emission light by a semiconductor photodetector and an improvement in light detection precision by selectively reflecting spontaneous emission light. The semiconductor light emitting device includes a semiconductor light emitting element for generating light including stimulated emission light having a wavelength λo and spontaneous emission light having a wavelength band including the wavelength λo, a multilayer filter having a stack structure in which a low-refractive-index layer having a thickness of λ1/(4×na) (λ1<λo and nadenote refractive index) and a high-refractive-index layer having a thickness of λ1/(4×nb) (nb>naand nbdenote refractive index) are alternately stacked, and a semiconductor photodetector having a light absorption layer that absorbs part of the light passed through the multilayer filter.

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patent: 2008/0117947 (2008-05-01), Masui et al.
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