Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2006-09-15

2009-10-13

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S079000, C257S094000, C257S096000, C257S097000, C257S190000, C257S196000, C257SE31019, C257SE31022, C257SE27120, C257SE33023, C257SE33024, C257SE33025, C257SE33026, C257SE33027, C257SE33028, C257SE33029, C257SE33030, C257SE33032, C257SE33033, C257SE33034, C257SE33044, C257SE33048, C257SE33049, C257S101000, C257S183000, C257SE33031, C438S046000, C438S047000, C372S043010, C372S045011, C372S050100

Reexamination Certificate

active

07601985

ABSTRACT:
A semiconductor light-emitting device includes: a substrate; a first conductivity type layer formed on the substrate and including a plurality of group III-V nitride semiconductor layers of a first conductivity type; an active layer formed on the first conductivity type layer; and a second conductivity type layer formed on the active layer and including a group III-V nitride semiconductor layer of a second conductivity type. The first conductivity type layer includes an intermediate layer made of AlxGa1−x−yInyN (wherein 0.001≦x<0.1, 0<y<1 and x+y<1).

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