Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2006-10-04

2008-11-18

Tran, Thien F (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S099000

Reexamination Certificate

active

07453099

ABSTRACT:
A semiconductor light emitting device has a transparent layer having a first main surface and a second main surface at a side opposite to the first main surface, a plurality of light emitting sections arranged in at least one line on the first main surface of the transparent layer, each of the plurality of light emitting sections having an active layer and a tapered section, the tapered section reflecting light emitted from the active layer to the direction of the transparent layer, each of the plurality of light emitting sections having a central portion and a peripheral portion and having light intensity distribution on a second main surface of the transparent layer, on the second main surface of the transparent layer, light intensity at a region opposite to the peripheral portion being equal to or more than light intensity at a region opposite to the central portion, and a plurality of contact sections arranged opposite to the central portion on the second main surface of the transparent layer, each of the plurality of contact sections being opaque with respect to emission wavelengths of the plurality of light emitting sections.

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U.S. Appl. No. 11/538,646, filed Oct. 4, 2006, Kato et al.
U.S. Appl. No. 11/589,087, Oct. 30, 2006, Yasuda et al.
U.S. Appl. No. 11/621,638, filed Jan. 10, 2007, Furukawa et al.
U.S. Appl. No. 11/538,646, Oct. 4, 2006, Kato et al.
U.S. Appl. No. 11/342,539, filed Jan. 31, 2006, Yuko Kato et al.

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