Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2005-11-01
2008-12-30
Harvey, Minsun (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S043010, C372S045012
Reexamination Certificate
active
07471711
ABSTRACT:
A semiconductor light emitting device including an active layer interposed between an n-type cladding layer and a p-type cladding layer employs an AlxGa1-xN (AlGaN) layer having an Al composition ratio x satisfying 0.01≦x<0.06 as the n-type cladding layer. As the Al composition ratio x decreases below 0.06, the AlGaN layer increases in refractive index. Thus, the near field pattern (NFP) in the vertical direction can spread out, and full width at half maximum of FFP in the vertical direction can be minimized. Further, since lattice mismatch with a GaN substrate is reduced with decreasing Al composition ratio, the AlGaN layer can be thick without causing cracks or dislocations, and spreading of light into the GaN substrate can be minimized.
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Harvey Minsun
Leydig , Voit & Mayer, Ltd.
Mitsubishi Denki & Kabushiki Kaisha
Nguyen Phillip
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