Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2006-03-10

2008-10-07

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

Reexamination Certificate

active

07432535

ABSTRACT:
A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge carriers in the active layer. The hetero-configuration is interposed between a first and a second electrode. The semiconductor light emitting device further includes a dense defect-injected layer. This layer is provided between the first electrode and the hetero-configuration. The dense defect-injected layer is made of material more fragile than the hetero-configuration. The dense defect-injected layer prevents defects injected into the hetero-configuration.

REFERENCES:
patent: 4984242 (1991-01-01), Scifres et al.
patent: 5019874 (1991-05-01), Inoue et al.
patent: 5042043 (1991-08-01), Hatano et al.
patent: 5153889 (1992-10-01), Sugawara et al.
patent: 5619519 (1997-04-01), Hamada et al.

Affiliated with

Also associated with

Rating

Semiconductor light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4017893