Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Plural light emitting devices
Reexamination Certificate
2006-03-02
2008-10-21
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Plural light emitting devices
C257SE33065
Reexamination Certificate
active
07439550
ABSTRACT:
A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having a topmost semiconductor layer, a pad electrode formed from a plurality of layers provided on the topmost semiconductor layer, and a linear electrode provided on the topmost semiconductor layer. The linear electrode can be configured to overlap the topmost semiconductor layer except for an area occupied by the pad electrode. The linear electrode can also be configured to make contact with part of the pad electrode, and form an ohmic contact with the topmost semiconductor layer. The pad electrode can include, as one of the plurality of layers, a barrier metal layer that covers part of or all of an upper surface and/or a sidewall of the linear electrode at a contact area between the linear electrode and the pad electrode.
REFERENCES:
patent: 5309001 (1994-05-01), Watanabe et al.
patent: 5698865 (1997-12-01), Gerner et al.
patent: 2004/0119078 (2004-06-01), Konno et al.
patent: 2004296979 (2004-10-01), None
Kobayashi Seiichiro
Takeshima Kazuki
Tomioka Yuko
Cermak Kenealy & Vaidya LLP
Pert Evan
Sandvik Ben P
Stanley Electric Co. Ltd.
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