Semiconductor light-emitting device

Details Semiconductor light-emitting device Semiconductor light-emitting device

2006-07-13

2008-05-06

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular semiconductor material

C257S101000, C257S102000, C257SE33043

Reexamination Certificate

active

07368759

ABSTRACT:
A semiconductor light emitting device has a light-emitting portion formed on a semiconductor substrate, an As-based p-type contact layer formed thereon, a current spreading layer formed thereon of a metal oxide material, and a buffer layer formed between the p-type cladding layer and the p-type contact layer. The buffer layer has a group III/V semiconductor with a p-type conductivity and hydrogen or carbon included intentionally or unavoidably therein, and the buffer layer has a thickness equal to or greater than a diffusion length L of a dopant doped into the p-type contact layer.

REFERENCES:
patent: RE35665 (1997-11-01), Lin et al.
patent: 6057562 (2000-05-01), Lee et al.
patent: 2006/0001042 (2006-01-01), Suzuki et al.
patent: 8-83927 (1996-03-01), None

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