Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-05-23
2008-09-09
Ngo, Ngan (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S081000, C257S082000, C257SE33067, C257SE33076
Reexamination Certificate
active
07423294
ABSTRACT:
A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.
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Arakida Takahiro
Koda Rintaro
Masui Yuji
Yamaguchi Norihiko
Yamauchi Yoshinori
Kananen Ronald P.
Ngo Ngan
Rader & Fishman & Grauer, PLLC
Sony Corporation
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