Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2007-02-06
2007-02-06
Doan, Theresa T. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S096000
Reexamination Certificate
active
11202368
ABSTRACT:
A semiconductor light-emitting device is made of a group III-nitride compound semiconductor expressed as AlxGayIn1−x−yN (where 0≦x≦1, 0≦y≦1, and 0≦x+y≦1). The semiconductor light-emitting device includes: a substrate made of SiC; a semiconductor layer which is placed above the substrate and has a light-emitting region; a multi-layered reflective layer which is placed between the substrate and the semiconductor layer and which reflects light produced in the light-emitting region; and a phase matching layer which is placed between the substrate and the multi-layered reflective layer and which reflects light produced in the light-emitting region and matches a phase of light reflected from a lower boundary surface of the multi-layered reflective layer and a phase of light reflected from a lower boundary surface of the substrate among light produced in the light-emitting region. A thickness of the phase matching layer is set so that a quantity of interfering light produced by the interference of light reflected from the lower boundary surface of the multi-layered reflective layer, light reflected from a lower boundary surface of the phase matching layer, and light reflected from the lower boundary surface of the substrate among light produced in the light-emitting region is locally maximized when the substrate has a predetermined thickness.
REFERENCES:
patent: 5237581 (1993-08-01), Asada et al.
patent: 5442203 (1995-08-01), Adomi et al.
patent: 2003-273399 (2003-09-01), None
Sai Hironobu
Tanaka Haruo
Doan Theresa T.
McDermott Will & Emery LLP
Rohm & Co., Ltd.
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